Datasheet
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? 2013 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB095T-60
?Application
?Dimensions (Unit : mm)
?Structure
Switching power supply
?Features
1) Cathode common type.
(TO-220)
2)
Low IR
3) High reliability
?Construction
Silicon epitaxial planar
?Absolute maximum ratings (Ta = 25°C)
Reverse voltage (repetitive peak)
VRM
V
Reverse voltage (DC)
VR
V
Average rectified forward current (*1) Io A6
Forward current surge peak (60Hz/1cyc)
IFSM
A
Junction temperature Tj °C150
Storage temperature Tstg °C?40 to ?150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130°C
Parameter ConditionsSymbol Min. Typ. Max. Unit
Forward voltage
VF
- - 0.58 V
IF=3A
Reverse current
IR
- - 300
?A
VR=60V
Thermal impedance
?jc
- - 3.0 °C/W junction to case
Parameter
?Electrical characteristics (Ta= 25°C)
Symbol Limits Unit
60
60
100
ROHM : TO220FN
Manufacture Date
1
6
(1) (2) (3)
1/4
2013.02 - Rev.E